DMP4065SQ-7

Active

Diodes Inc

40V P-CHANNEL ENHANCEMENT MODE MOSFET

Search across all available documentation for this part.

Active

Diodes Inc

40V P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMP4065SQ-7

Current - Continuous Drain (Id) @ 25°C	2.4 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.2 nC
Input Capacitance (Ciss) (Max) @ Vds	587 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	720 mW
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

40V P-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMP4065SQ-7	587 pF	20 V	-55 °C	150 °C	3 V	720 mW	P-Channel	80 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	2.4 A	40 V	Surface Mount	SOT-23-3	SC-59 SOT-23-3 TO-236-3	12.2 nC
Diodes Inc DMP4065S-13	587 pF	20 V	-55 °C	150 °C	3 V	720 mW	P-Channel	80 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	2.4 A	40 V	Surface Mount	SOT-23-3	SC-59 SOT-23-3 TO-236-3	12.2 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.