40V P-Channel Enhancement Mode MOSFET
40V P-Channel Enhancement Mode MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Power Dissipation (Max) | FET Type | Rds On (Max) @ Id, Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Mounting Type | Supplier Device Package | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 587 pF | 20 V | -55 °C | 150 °C | 3 V | 720 mW | P-Channel | 80 mOhm | MOSFET (Metal Oxide) | 4.5 V 10 V | 2.4 A | 40 V | Surface Mount | SOT-23-3 | SC-59 SOT-23-3 TO-236-3 | 12.2 nC |
Diodes Inc | 587 pF | 20 V | -55 °C | 150 °C | 3 V | 720 mW | P-Channel | 80 mOhm | MOSFET (Metal Oxide) | 4.5 V 10 V | 2.4 A | 40 V | Surface Mount | SOT-23-3 | SC-59 SOT-23-3 TO-236-3 | 12.2 nC |