Zenode.ai Logo
Beta
⌘K
Log InSign Up
STU6N65M2 - I-Pak

STU6N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 1.2 OHM TYP., 4 A MDMESH M2 POWER MOSFET IN IPAK PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTN1224+24
STU6N65M2 - I-Pak

STU6N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 1.2 OHM TYP., 4 A MDMESH M2 POWER MOSFET IN IPAK PACKAGE

Deep-Dive with AI

DocumentsTN1224+24

Technical Specifications

Parameters and characteristics for this part

SpecificationSTU6N65M2
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.8 nC
Input Capacitance (Ciss) (Max) @ Vds226 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)60 W
Rds On (Max) @ Id, Vgs [Max]1.35 Ohm
Supplier Device PackageTO-251 (IPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 75$ 0.85
150$ 0.67
375$ 0.67
525$ 0.57
1875$ 0.46
3750$ 0.44
7500$ 0.42

Description

General part information

STU6N65M2 Series

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.