STU6N65K3

Obsolete

STMicroelectronics

MOSFET N-CH 650V 5.4A IPAK

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STU6N65K3

Obsolete

STMicroelectronics

MOSFET N-CH 650V 5.4A IPAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STU6N65K3

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	880 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	1.3 Ohm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STU6N65M2 Series

N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STU6N65K3	5.4 A	1.3 Ohm	TO-251 (IPAK)	10 V	150 °C	Through Hole	650 V	30 V	4.5 V	N-Channel	880 pF	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	110 W
STMicroelectronics STU6N65M2	4 A		TO-251 (IPAK)	10 V		Through Hole	650 V	25 V	4 V	N-Channel	226 pF	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA		1.35 Ohm	-55 °C	150 °C	60 W	9.8 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STU6N65M2 Series

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources