IXFH50N20

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IXYS

MOSFET N-CH 200V 50A TO247AD

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IXYS

MOSFET N-CH 200V 50A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH50N20

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	220 nC
Input Capacitance (Ciss) (Max) @ Vds	4400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)
IXYS IXFH50N60X	4.5 V	600 V	4660 pF	116 nC	N-Channel	TO-247 (IXTH)	TO-247-3	73 mOhm	MOSFET (Metal Oxide)	50 A	-55 °C	150 °C	30 V	660 W	10 V	Through Hole
IXYS IXFH50N20		200 V	4400 pF		N-Channel	TO-247AD (IXFH)	TO-247-3	45 mOhm	MOSFET (Metal Oxide)	50 A	-55 °C	150 °C	20 V	300 W	10 V	Through Hole	220 nC	4 V
IXYS IXFH50N50P3	5 V	500 V	4335 pF		N-Channel	TO-247AD (IXFH)	TO-247-3	120 mOhm	MOSFET (Metal Oxide)	50 A	-55 °C	150 °C	30 V		10 V	Through Hole	85 nC		960 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 50A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

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