MOSFET N-CH 600V 50A TO247
| Part | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 4.5 V | 600 V | 4660 pF | 116 nC | N-Channel | TO-247 (IXTH) | TO-247-3 | 73 mOhm | MOSFET (Metal Oxide) | 50 A | -55 °C | 150 °C | 30 V | 660 W | 10 V | Through Hole | |||
IXYS | 200 V | 4400 pF | N-Channel | TO-247AD (IXFH) | TO-247-3 | 45 mOhm | MOSFET (Metal Oxide) | 50 A | -55 °C | 150 °C | 20 V | 300 W | 10 V | Through Hole | 220 nC | 4 V | |||
IXYS | 5 V | 500 V | 4335 pF | N-Channel | TO-247AD (IXFH) | TO-247-3 | 120 mOhm | MOSFET (Metal Oxide) | 50 A | -55 °C | 150 °C | 30 V | 10 V | Through Hole | 85 nC | 960 W |