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IXFH14N100Q2 - TO-247_IXFH

IXFH14N100Q2

IXYS

MOSFET N-CH 1000V 14A TO247AD

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IXFH14N100Q2 - TO-247_IXFH

IXFH14N100Q2

IXYS

MOSFET N-CH 1000V 14A TO247AD

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Technical Specifications

Parameters and characteristics for this part

SpecificationIXFH14N100Q2
Current - Continuous Drain (Id) @ 25°C14 A
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]83 nC
Input Capacitance (Ciss) (Max) @ Vds2800 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)500 W
Rds On (Max) @ Id, Vgs950 mOhm
Supplier Device PackageTO-247AD (IXFH)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 30$ 13.60

Description

General part information

IXFH14 Series

N-Channel 1000 V 14A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH)

Documents

Technical documentation and resources

No documents available