MOSFET N-CH 1000V 14A TO247AD
| Part | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 170 nC | TO-247-3 | Through Hole | 14 A | 5 V | TO-247AD (IXFH) | -55 °C | 150 °C | MOSFET (Metal Oxide) | 750 mOhm | 20 V | 10 V | 4500 pF | 360 W | 1000 V | N-Channel | |||
IXYS | 200 nC | TO-247-3 | Through Hole | 14 A | 4.5 V | TO-247AD (IXFH) | -55 °C | 150 °C | MOSFET (Metal Oxide) | 700 mOhm | 20 V | 10 V | 800 V | N-Channel | 4870 pF | 300 W | |||
IXYS | 220 nC | TO-247-3 | Through Hole | 14 A | 4.5 V | TO-247AD (IXFH) | -55 °C | 150 °C | MOSFET (Metal Oxide) | 750 mOhm | 20 V | 10 V | 4500 pF | 360 W | 1000 V | N-Channel | |||
IXYS | TO-247-3 | Through Hole | 14 A | 5.5 V | TO-247AD (IXFH) | -55 °C | 150 °C | MOSFET (Metal Oxide) | 950 mOhm | 30 V | 10 V | 2800 pF | 500 W | 1000 V | N-Channel | 83 nC |