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UCC27301AQDRCRQ1

UCC27301AQDRCRQ1

Active
Texas Instruments

AUTOMOTIVE 120V 4A HALF-BRIDGE DRIVER WITH 8V UVLO, ENABLE AND INTERLOCK

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UCC27301AQDRCRQ1

UCC27301AQDRCRQ1

Active
Texas Instruments

AUTOMOTIVE 120V 4A HALF-BRIDGE DRIVER WITH 8V UVLO, ENABLE AND INTERLOCK

Find alt

Description

General part information

UCC27301A-Q1 Series

The UCC27301A-Q1 is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27301A-Q1 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The inputs are independent of supply voltage and are able to withstand -10V and +20V absolute maximum ratings. The low-side and high-side gate drivers are matched to 4ns between the turn on and turn off of each other and are controlled throught the LI and HI input pins respectively. However, the input interlock logic will turn both driver outputs low whenever both LI and HI inputs are high at the same time. An on-chip 120V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

The UCC27301A-Q1 is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27301A-Q1 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

Technical Specifications

Parameters and characteristics for this part

SpecificationUCC27301AQDRCRQ1
Channel TypeIndependent
Current - Peak Output (Sink)3.7 A
Current - Peak Output (Source)4.5 A
Driven ConfigurationHalf-Bridge
Fall Time (Typ)5.5 ns
Gate ChannelN-Channel
Gate TypeMOSFET
GradeAutomotive
High Side Voltage - Max (Bootstrap)120 V
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / Case10-VFDFN Exposed Pad
Package Length3 mm
Package Name10-VSON
Package Width3 mm
QualificationAEC-Q100
Rise Time (Typ)7.2 ns
Voltage - Supply (Maximum)17 V
Voltage - Supply (Minimum)8 V

Pricing

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CAD

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