Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC12065D |
|---|---|
| Capacitance @ Vr, F | 750 pF |
| Current - Average Rectified (Io) | 12 A |
| Current - Reverse Leakage @ Vr | 150 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-220AC |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STPSC12065-Y Series
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC12065-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Documents
Technical documentation and resources