Diode SiC Schottky 650V 12A 2-Pin TO-220ACFP Tube

STPSC12065DY

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 12 A, 36 NC, TO-220ACFP

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STPSC12065DY

Active

STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 12 A, 36 NC, TO-220ACFP

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Description Specifications Series Pricing CAD Documents

Description

General part information

STPSC12065-Y Series

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC12065-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

Technical Specifications

Parameters and characteristics for this part

Specification	STPSC12065DY

Capacitance	750 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage	50 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-40 °C
Package / Case	TO-220-2
Package Name	TO-220AC
Qualification	AEC-Q101
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.45 V

STPSC12065-Y Series

Automotive 650 V, TO-220 D2PAK SiC Power Schottky Diode

Part	Mounting Type	Package / Case	Capacitance	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Current - Reverse Leakage	Voltage - DC Reverse (Vr) (Max)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Average Rectified (Io)	Technology	Package Name	Voltage - Forward (Vf) (Max)
STMicroelectronics STPSC12065G-TR	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	750 pF	500 mA	No Recovery Time	500 mA 500 mA	150 µA	650 V	175 °C	-40 °C	12 A	SiC (Silicon Carbide) Schottky	D2PAK	1.45 V
STMicroelectronics STPSC12065D	Through Hole	TO-220-2	750 pF	500 mA	No Recovery Time	500 mA 500 mA	150 µA	650 V	175 °C	-40 °C	12 A	SiC (Silicon Carbide) Schottky	TO-220AC	1.45 V
STMicroelectronics STPSC12065G2-TR	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	750 pF	500 mA	No Recovery Time	500 mA 500 mA	150 µA	650 V	175 °C	-40 °C	12 A	SiC (Silicon Carbide) Schottky	D2PAK	1.45 V