IPD65R650CEAUMA1

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Infineon Technologies

MOSFET, N-CH, 650V, 10.1A, TO-252

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Infineon Technologies

MOSFET, N-CH, 650V, 10.1A, TO-252

Technical Specifications

Parameters and characteristics for this part

Specification	IPD65R650CEAUMA1

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	86 W
Rds On (Max) @ Id, Vgs	650 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPD65R650CEAUMA1	23 nC	PG-TO252-3	650 V	650 mOhm	150 °C	-40 °C	7 A	N-Channel	10 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	MOSFET (Metal Oxide)	86 W	20 V	440 pF

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General part information

N-Channel 650 V 7A (Tc) 86W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources