Beta
⌘K
MOSFET, N-CH, 650V, 10.1A, TO-252
| Part | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Package / Case | Vgs(th) (Max) @ Id | Technology | Power Dissipation (Max) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 23 nC | PG-TO252-3 | 650 V | 650 mOhm | 150 °C | -40 °C | 7 A | N-Channel | 10 V | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 3.5 V | MOSFET (Metal Oxide) | 86 W | 20 V | 440 pF |