SSM6N61NU,LF

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 4A 6UDFNB

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 4A 6UDFNB

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N61NU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]	3.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	FET Feature	FET Feature	Supplier Device Package	Technology	Power - Max [Max]	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage SSM6N61NU,LF	-55 °C	150 °C	410 pF	3.6 nC	2 N-Channel (Dual)	Logic Level Gate	1.5 V	6-UDFNB (2x2)	MOSFET (Metal Oxide)	2 W	Surface Mount	1 V	20 V	33 mOhm	4 A

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General part information

Mosfet Array 20V 4A 2W Surface Mount 6-UDFNB (2x2)

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