MOSFET 2N-CH 20V 4A 6UDFNB
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Configuration | FET Feature | FET Feature | Supplier Device Package | Technology | Power - Max [Max] | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | -55 °C | 150 °C | 410 pF | 3.6 nC | 2 N-Channel (Dual) | Logic Level Gate | 1.5 V | 6-UDFNB (2x2) | MOSFET (Metal Oxide) | 2 W | Surface Mount | 1 V | 20 V | 33 mOhm | 4 A |