Specification	AOI4S60

Current - Continuous Drain (Id) (Tc)	4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	6 nC
Input Capacitance (Ciss) (Max)	263 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Package Name	TO-251A
Power Dissipation (Max)	56.8 W
Rds On (Max)	900 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4.1 V

AOI4 Series

Part	Mounting Type	Technology	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max)	Power Dissipation (Max)	Package / Case	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)
Alpha & Omega Semiconductor Inc. AOI4T60	Through Hole	MOSFET (Metal Oxide)	600 V	N-Channel	2.1 Ohm	83 W	IPAK TO-251-3 Stub Leads	TO-251A	-50 °C	150 °C	460 pF	5 V	10 V	30 V	4 A	15 nC
Alpha & Omega Semiconductor Inc. AOI4C60	Through Hole	MOSFET (Metal Oxide)	600 V	N-Channel	0.95 Ohm	125 W	IPAK TO-251-3 Stub Leads	TO-251A	-50 °C	150 °C	910 pF 910 pF	5 V	10 V	30 V	4 A	18 nC
Alpha & Omega Semiconductor Inc. AOI4S60	Through Hole	MOSFET (Metal Oxide)	600 V	N-Channel	900 mOhm	56.8 W	IPAK TO-251-3 Stub Leads	TO-251A	-55 °C	150 °C	263 pF	4.1 V	10 V	30 V	4 A	6 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources