MOSFET N-CH 600V 4A TO251A
| Part | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Power Dissipation (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Package / Case | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | Through Hole | 4 A | 30 V | 83 W | MOSFET (Metal Oxide) | 10 V | 2.1 Ohm | 5 V | 460 pF | N-Channel | TO-251-3 Stub Leads IPAK | 600 V | 150 °C | -50 °C | TO-251A | |||
Alpha & Omega Semiconductor Inc. | Through Hole | 4 A | 30 V | 56.8 W | MOSFET (Metal Oxide) | 10 V | 4.1 V | N-Channel | TO-251-3 Stub Leads IPAK | 600 V | 150 °C | -55 °C | TO-251A | 900 mOhm | 6 nC | 263 pF |