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IRF9952TRPBF - null

IRF9952TRPBF

Active
Infineon Technologies

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 30 V, 30 V, 3.5 A, 3.5 A, 0.08 OHM

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DocumentsDatasheetIR Part Numbering System+6
IRF9952TRPBF - null

IRF9952TRPBF

Active
Infineon Technologies

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 30 V, 30 V, 3.5 A, 3.5 A, 0.08 OHM

Deep-Dive with AI

DocumentsDatasheetIR Part Numbering System+6

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF9952TRPBF
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C2.3 A, 3.5 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs14 nC
Input Capacitance (Ciss) (Max) @ Vds190 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]2 W
Rds On (Max) @ Id, Vgs100 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

IRF995 Series

PartPackage / CasePackage / Case [y]Package / Case [x]Mounting TypeConfigurationCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdTechnologyGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsOperating Temperature [Min]Operating Temperature [Max]Rds On (Max) @ Id, VgsPower - Max [Max]Supplier Device PackageFET Feature
Infineon Technologies
IRF9953PBF
8-SOIC
3.9 mm
0.154 in
Surface Mount
2 P-Channel
2.3 A
1 V
MOSFET (Metal Oxide)
12 nC
30 V
190 pF
-55 °C
150 °C
250 mOhm
2 W
8-SO
Infineon Technologies
IRF9952PBF
8-SOIC
3.9 mm
0.154 in
Surface Mount
N and P-Channel
2.3 A
3.5 A
1 V
MOSFET (Metal Oxide)
14 nC
30 V
190 pF
-55 °C
150 °C
100 mOhm
2 W
8-SO
Logic Level Gate
Infineon Technologies
IRF9953TRPBF
8-SOIC
3.9 mm
0.154 in
Surface Mount
2 P-Channel
2.3 A
1 V
MOSFET (Metal Oxide)
12 nC
30 V
190 pF
-55 °C
150 °C
250 mOhm
2 W
8-SO
Infineon Technologies
IRF9953TR
8-SOIC
3.9 mm
0.154 in
Surface Mount
2 P-Channel
2.3 A
1 V
MOSFET (Metal Oxide)
12 nC
30 V
190 pF
-55 °C
150 °C
250 mOhm
2 W
8-SO
Logic Level Gate
Infineon Technologies
IRF9956TRPBF
8-SOIC
3.9 mm
0.154 in
Surface Mount
2 N-Channel (Dual)
3.5 A
1 V
MOSFET (Metal Oxide)
14 nC
30 V
190 pF
-55 °C
150 °C
100 mOhm
2 W
8-SO
Logic Level Gate
Infineon Technologies
IRF9952
8-SOIC
3.9 mm
0.154 in
Surface Mount
N and P-Channel
2.3 A
3.5 A
1 V
MOSFET (Metal Oxide)
14 nC
30 V
190 pF
-55 °C
150 °C
100 mOhm
2 W
8-SO
Logic Level Gate
Infineon Technologies
IRF9953
8-SOIC
3.9 mm
0.154 in
Surface Mount
2 P-Channel
2.3 A
1 V
MOSFET (Metal Oxide)
12 nC
30 V
190 pF
-55 °C
150 °C
250 mOhm
2 W
8-SO
Logic Level Gate
Infineon Technologies
IRF9952TRPBF
8-SOIC
3.9 mm
0.154 in
Surface Mount
N and P-Channel
2.3 A
3.5 A
1 V
MOSFET (Metal Oxide)
14 nC
30 V
190 pF
-55 °C
150 °C
100 mOhm
2 W
8-SO
Logic Level Gate
Infineon Technologies
IRF9952TR
8-SOIC
3.9 mm
0.154 in
Surface Mount
N and P-Channel
2.3 A
3.5 A
1 V
MOSFET (Metal Oxide)
14 nC
30 V
190 pF
-55 °C
150 °C
100 mOhm
2 W
8-SO
Logic Level Gate

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.82
10$ 0.71
100$ 0.49
500$ 0.41
1000$ 0.35
2000$ 0.31
Digi-Reel® 1$ 0.82
10$ 0.71
100$ 0.49
500$ 0.41
1000$ 0.35
2000$ 0.31
Tape & Reel (TR) 4000$ 0.31
8000$ 0.30
12000$ 0.27
28000$ 0.27
NewarkEach (Supplied on Cut Tape) 1$ 0.63
10$ 0.63
25$ 0.58
50$ 0.54
100$ 0.49
250$ 0.44
500$ 0.39
1000$ 0.35

Description

General part information

IRF995 Series

Mosfet Array 30V 3.5A, 2.3A 2W Surface Mount 8-SO