MOSFET 2P-CH 30V 2.3A 8SO
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Configuration | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Technology | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Power - Max [Max] | Supplier Device Package | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 2 P-Channel | 2.3 A | 1 V | MOSFET (Metal Oxide) | 12 nC | 30 V | 190 pF | -55 °C | 150 °C | 250 mOhm | 2 W | 8-SO | |
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | N and P-Channel | 2.3 A 3.5 A | 1 V | MOSFET (Metal Oxide) | 14 nC | 30 V | 190 pF | -55 °C | 150 °C | 100 mOhm | 2 W | 8-SO | Logic Level Gate |
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 2 P-Channel | 2.3 A | 1 V | MOSFET (Metal Oxide) | 12 nC | 30 V | 190 pF | -55 °C | 150 °C | 250 mOhm | 2 W | 8-SO | |
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 2 P-Channel | 2.3 A | 1 V | MOSFET (Metal Oxide) | 12 nC | 30 V | 190 pF | -55 °C | 150 °C | 250 mOhm | 2 W | 8-SO | Logic Level Gate |
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 2 N-Channel (Dual) | 3.5 A | 1 V | MOSFET (Metal Oxide) | 14 nC | 30 V | 190 pF | -55 °C | 150 °C | 100 mOhm | 2 W | 8-SO | Logic Level Gate |
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | N and P-Channel | 2.3 A 3.5 A | 1 V | MOSFET (Metal Oxide) | 14 nC | 30 V | 190 pF | -55 °C | 150 °C | 100 mOhm | 2 W | 8-SO | Logic Level Gate |
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 2 P-Channel | 2.3 A | 1 V | MOSFET (Metal Oxide) | 12 nC | 30 V | 190 pF | -55 °C | 150 °C | 250 mOhm | 2 W | 8-SO | Logic Level Gate |
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | N and P-Channel | 2.3 A 3.5 A | 1 V | MOSFET (Metal Oxide) | 14 nC | 30 V | 190 pF | -55 °C | 150 °C | 100 mOhm | 2 W | 8-SO | Logic Level Gate |
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | N and P-Channel | 2.3 A 3.5 A | 1 V | MOSFET (Metal Oxide) | 14 nC | 30 V | 190 pF | -55 °C | 150 °C | 100 mOhm | 2 W | 8-SO | Logic Level Gate |