DMN3024LSS-13

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3024LSS-13

Current - Continuous Drain (Id) @ 25°C	6.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.9 nC
Input Capacitance (Ciss) (Max) @ Vds	608 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs [Max]	24 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Dual N-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Package / Case [y]	Package / Case [x]	Power - Max [Max]	Configuration	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMN3024SFG-13	30 V	900 mW	MOSFET (Metal Oxide)	4.5 V 10 V	2.4 V	7.5 A	N-Channel	479 pF	10.5 nC	POWERDI3333-8	25 V	-55 °C	150 °C	8-PowerVDFN	23 mOhm	Surface Mount
Diodes Inc DMN3024LSD-13	30 V		MOSFET (Metal Oxide)		3 V	6.8 A		608 pF	12.9 nC	8-SO		-55 °C	150 °C	8-SOIC		Surface Mount	24 mOhm	3.9 mm	0.154 in	1.8 W	2 N-Channel (Dual)	Logic Level Gate
Diodes Inc DMN3024LSS-13	30 V		MOSFET (Metal Oxide)	4.5 V 10 V	3 V	6.4 A	N-Channel	608 pF		8-SO	20 V	-55 °C	150 °C	8-SOIC		Surface Mount	24 mOhm	3.9 mm	0.154 in				12.9 nC

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General part information

Dual N-Channel Enhancement Mode MOSFET

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