Catalog
Dual N-Channel Enhancement Mode MOSFET
Beta
⌘K
Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Package / Case [y] | Package / Case [x] | Power - Max [Max] | Configuration | FET Feature | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 30 V | 900 mW | MOSFET (Metal Oxide) | 4.5 V 10 V | 2.4 V | 7.5 A | N-Channel | 479 pF | 10.5 nC | POWERDI3333-8 | 25 V | -55 °C | 150 °C | 8-PowerVDFN | 23 mOhm | Surface Mount | |||||||
Diodes Inc | 30 V | MOSFET (Metal Oxide) | 3 V | 6.8 A | 608 pF | 12.9 nC | 8-SO | -55 °C | 150 °C | 8-SOIC | Surface Mount | 24 mOhm | 3.9 mm | 0.154 in | 1.8 W | 2 N-Channel (Dual) | Logic Level Gate | ||||||
Diodes Inc | 30 V | MOSFET (Metal Oxide) | 4.5 V 10 V | 3 V | 6.4 A | N-Channel | 608 pF | 8-SO | 20 V | -55 °C | 150 °C | 8-SOIC | Surface Mount | 24 mOhm | 3.9 mm | 0.154 in | 12.9 nC |