IDL02G65C5XUMA1

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Infineon Technologies

DIODE SIL CARBIDE 650V 2A VSON-4

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Unknown

Infineon Technologies

DIODE SIL CARBIDE 650V 2A VSON-4

Technical Specifications

Parameters and characteristics for this part

Specification	IDL02G65C5XUMA1

Capacitance @ Vr, F	70 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	35 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	4-PowerTSFN
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-VSON-4
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Reverse Recovery Time (trr)	Mounting Type	Capacitance @ Vr, F	Technology	Current - Average Rectified (Io)	Speed	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
Infineon Technologies IDL02G65C5XUMA1	175 ░C	-55 C	1.7 V	4-PowerTSFN	0 ns	Surface Mount	70 pF	SiC (Silicon Carbide) Schottky	2 A	No Recovery Time	PG-VSON-4	650 V	35 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 2A Surface Mount PG-VSON-4

Technical documentation and resources