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DIODE SIL CARBIDE 650V 2A VSON-4
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If [Max] | Package / Case | Reverse Recovery Time (trr) | Mounting Type | Capacitance @ Vr, F | Technology | Current - Average Rectified (Io) | Speed | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 175 ░C | -55 C | 1.7 V | 4-PowerTSFN | 0 ns | Surface Mount | 70 pF | SiC (Silicon Carbide) Schottky | 2 A | No Recovery Time | PG-VSON-4 | 650 V | 35 µA |