IXFK20N120P

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IXYS

MOSFET N-CH 1200V 20A TO264AA

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IXYS

MOSFET N-CH 1200V 20A TO264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK20N120P

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	193 nC
Input Capacitance (Ciss) (Max) @ Vds	11100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	780 W
Rds On (Max) @ Id, Vgs [Max]	570 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFK20N120P	11100 pF	20 A	570 mOhm	10 V	N-Channel	TO-264-3 TO-264AA	780 W	6.5 V	30 V	193 nC	TO-264AA (IXFK)	MOSFET (Metal Oxide)	-55 °C	150 °C	1200 V	Through Hole
IXYS IXFK20N80Q	5100 pF	20 A	420 mOhm	10 V	N-Channel	TO-264-3 TO-264AA		4.5 V	20 V		TO-264AA (IXFK)	MOSFET (Metal Oxide)	-55 °C	150 °C	800 V	Through Hole	360 W	200 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 17.79

General part information

N-Channel 1200 V 20A (Tc) 780W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources

No documents available