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MOSFET N-CH 1200V 20A TO264AA
| Part | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Package / Case | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 11100 pF | 20 A | 570 mOhm | 10 V | N-Channel | TO-264-3 TO-264AA | 780 W | 6.5 V | 30 V | 193 nC | TO-264AA (IXFK) | MOSFET (Metal Oxide) | -55 °C | 150 °C | 1200 V | Through Hole | ||
IXYS | 5100 pF | 20 A | 420 mOhm | 10 V | N-Channel | TO-264-3 TO-264AA | 4.5 V | 20 V | TO-264AA (IXFK) | MOSFET (Metal Oxide) | -55 °C | 150 °C | 800 V | Through Hole | 360 W | 200 nC |