BSZ12DN20NS3GATMA1
ActiveInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; PQFN 3.3 X 3.3 PACKAGE; 125 MOHM;
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BSZ12DN20NS3GATMA1
ActiveInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; PQFN 3.3 X 3.3 PACKAGE; 125 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSZ12DN20NS3GATMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 8.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) [Max] | 50 W |
| Rds On (Max) @ Id, Vgs | 125 mOhm |
| Supplier Device Package | PG-TSDSON-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.94 | |
| 10 | $ 1.24 | |||
| 100 | $ 0.84 | |||
| 500 | $ 0.67 | |||
| 1000 | $ 0.61 | |||
| 2000 | $ 0.56 | |||
| Digi-Reel® | 1 | $ 1.94 | ||
| 10 | $ 1.24 | |||
| 100 | $ 0.84 | |||
| 500 | $ 0.67 | |||
| 1000 | $ 0.61 | |||
| 2000 | $ 0.56 | |||
| Tape & Reel (TR) | 5000 | $ 0.52 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.60 | |
| 10 | $ 1.03 | |||
| 25 | $ 0.91 | |||
| 50 | $ 0.80 | |||
| 100 | $ 0.69 | |||
| 250 | $ 0.62 | |||
| 500 | $ 0.55 | |||
| 1000 | $ 0.50 | |||
Description
General part information
BSZ12DN20 Series
Infineon's 200 V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48 V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
Documents
Technical documentation and resources