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OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; PQFN 3.3 X 3.3 PACKAGE; 125 MOHM;
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Vgs (Max) | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | FET Type | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 150 °C | 680 pF | 200 V | 8.7 nC | Surface Mount | 20 V | 50 W | 10 V | 4 V | N-Channel | MOSFET (Metal Oxide) | 125 mOhm | PG-TSDSON-8 | 8-PowerTDFN |