TPS1100D

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Texas Instruments

TRANS MOSFET P-CH SI 15V 1.6A 8-PIN SOIC TUBE

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TPS1100D

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Texas Instruments

TRANS MOSFET P-CH SI 15V 1.6A 8-PIN SOIC TUBE

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Description Specifications Series Pricing CAD Documents

Description

General part information

TPS1100 Series

The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTMprocess. With a maximum VGS(th)of -1.5 V and an IDSSof only 0.5 uA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on)and excellent ac characteristics (rise time 10 ns typical) make the TPS1100 the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.

The ultrathin thin shrink small-outline package or TSSOP (PW) version with its smaller footprint and reduction in height fits in places where other P-channel MOSFETs cannot. The size advantage is especially important where board real estate is at a premium and height restrictions do not allow for a small-outline integrated circuit (SOIC) package.

Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other p-channel MOSFETs in SOIC packages.

Technical Specifications

Parameters and characteristics for this part

Specification	TPS1100D

Current - Continuous Drain (Id) (Ta)	1.6 A
Drain to Source Voltage (Vdss)	15 V
Drive Voltage (Max Rds On)	2.7 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	5.45 nC, 5.45 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	791 mW
Rds On (Max)	180 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-15 V
Vgs (Max) Positive	2 V
Vgs(th) (Max)	1.5 V

TPS1100 Series

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Rds On (Max)	Gate Charge (Max)	Technology	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max)	Package Length	Package Name	Package Width	Vgs (Max) Negative	Vgs (Max) Positive	Current - Continuous Drain (Id) (Ta)
Texas Instruments TPS1100PWR	10 V	2.7 V	P-Channel	180 mOhm	5.45 nC 5.45 nC	MOSFET (Metal Oxide)	15 V	-40 °C	150 °C	504 mW	Surface Mount	1.5 V	0.173 in	8-TSSOP	4.4 mm	-15 V	2 V	1.27 A
Texas Instruments TPS1100DR	10 V	2.7 V	P-Channel	180 mOhm	5.45 nC 5.45 nC	MOSFET (Metal Oxide)	15 V	-40 °C	150 °C	791 mW	Surface Mount	1.5 V	0.154 in	8-SOIC	3.9 mm	-15 V	2 V	1.6 A
Texas Instruments TPS1100PW	10 V	2.7 V	P-Channel	180 mOhm	5.45 nC 5.45 nC	MOSFET (Metal Oxide)	15 V	-40 °C	150 °C	504 mW	Surface Mount	1.5 V	0.173 in	8-TSSOP	4.4 mm	-15 V	2 V	1.27 A
Texas Instruments TPS1100D	10 V	2.7 V	P-Channel	180 mOhm	5.45 nC 5.45 nC	MOSFET (Metal Oxide)	15 V	-40 °C	150 °C	791 mW	Surface Mount	1.5 V	0.154 in	8-SOIC	3.9 mm	-15 V	2 V	1.6 A

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Single P-Channel Enhancement-Mode MOSFETs datasheet (Rev. C)