TSM2309CX

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Taiwan Semiconductor Corporation

-60V, -3.1A, SINGLE P-CHANNEL MOSFETS

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Taiwan Semiconductor Corporation

-60V, -3.1A, SINGLE P-CHANNEL MOSFETS

Technical Specifications

Parameters and characteristics for this part

Specification	TSM2309CX

Current - Continuous Drain (Id) @ 25°C	3.1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.2 nC
Input Capacitance (Ciss) (Max) @ Vds	425 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	1.56 W
Rds On (Max) @ Id, Vgs [Max]	190 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)
Taiwan Semiconductor Corporation TSM2309CX	4.5 V 10 V	MOSFET (Metal Oxide)	8.2 nC	P-Channel	190 mOhm	150 °C	20 V	3.1 A	2.5 V	SOT-23	425 pF	1.56 W	SC-59 SOT-23-3 TO-236-3	Surface Mount	60 V

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General part information

P-Channel 60 V 3.1A (Tc) 1.56W (Tc) Surface Mount SOT-23

Technical documentation and resources