Beta
⌘K
-60V, -3.1A, SINGLE P-CHANNEL MOSFETS
| Part | Drive Voltage (Max Rds On, Min Rds On) | Technology | Gate Charge (Qg) (Max) @ Vgs | FET Type | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 4.5 V 10 V | MOSFET (Metal Oxide) | 8.2 nC | P-Channel | 190 mOhm | 150 °C | 20 V | 3.1 A | 2.5 V | SOT-23 | 425 pF | 1.56 W | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 60 V |