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DMN4800LSSQ-13 - 8 SO

DMN4800LSSQ-13

Active
Diodes Inc

MOSFET, N-CH, 30V, 8.6A, SOIC ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsDatasheetRecommended Soldering Techniques+2
DMN4800LSSQ-13 - 8 SO

DMN4800LSSQ-13

Active
Diodes Inc

MOSFET, N-CH, 30V, 8.6A, SOIC ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheetRecommended Soldering Techniques+2

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN4800LSSQ-13
Current - Continuous Drain (Id) @ 25°C8.6 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.7 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds798 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)1.46 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs14 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id1.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.52
10$ 0.44
100$ 0.31
500$ 0.24
1000$ 0.20
Digi-Reel® 1$ 0.52
10$ 0.44
100$ 0.31
500$ 0.24
1000$ 0.20
Tape & Reel (TR) 2500$ 0.17
5000$ 0.17
12500$ 0.15
25000$ 0.15
NewarkEach (Supplied on Cut Tape) 1$ 0.79
10$ 0.49
25$ 0.44
50$ 0.38
100$ 0.32
250$ 0.29
500$ 0.25
1000$ 0.23

Description

General part information

DMN4800LSSQ Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.