DMN4800LSS-13
ActiveDiodes Inc
POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 30V, 0.014OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, SOP-8
Deep-Dive with AI
Search across all available documentation for this part.
DMN4800LSS-13
ActiveDiodes Inc
POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 30V, 0.014OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, SOP-8
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN4800LSS-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.47 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 798 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 1.46 W |
| Rds On (Max) @ Id, Vgs | 16 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 1.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.43 | |
| 10 | $ 0.37 | |||
| 100 | $ 0.25 | |||
| 500 | $ 0.20 | |||
| 1000 | $ 0.16 | |||
| Digi-Reel® | 1 | $ 0.43 | ||
| 10 | $ 0.37 | |||
| 100 | $ 0.25 | |||
| 500 | $ 0.20 | |||
| 1000 | $ 0.16 | |||
| Tape & Reel (TR) | 2500 | $ 0.12 | ||
Description
General part information
DMN4800LSSQ Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources