RF2L42008CG2
LTBSTMicroelectronics
8 W, 28 V, 0.7 TO 4.2 GHZ RF POWER LDMOS TRANSISTOR
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DocumentsDS13240
RF2L42008CG2
LTBSTMicroelectronics
8 W, 28 V, 0.7 TO 4.2 GHZ RF POWER LDMOS TRANSISTOR
Deep-Dive with AI
DocumentsDS13240
Technical Specifications
Parameters and characteristics for this part
| Specification | RF2L42008CG2 |
|---|---|
| Current Rating (Amps) | 1 µA |
| Frequency [Max] | 4.2 GHz |
| Frequency [Min] | 700 MHz |
| Gain | 14.5 dBi |
| Mounting Type | Surface Mount |
| Package / Case | E2 |
| Power - Output | 8 W |
| Supplier Device Package | E2 |
| Voltage - Rated | 65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 300 | $ 34.22 | |
Description
General part information
RF2L42008CG2 Series
The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical modulation formats.
Documents
Technical documentation and resources