RF2L42008CG2 Series

8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor

Catalog

8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor

Part	Frequency [Min]	Frequency [Max]	Current Rating (Amps)	Power - Output	Package / Case	Mounting Type	Supplier Device Package	Gain	Voltage - Rated
STMicroelectronics RF2L42008CG2	700 MHz	4.2 GHz	1 µA	8 W	E2	Surface Mount	E2	14.5 dBi	65 V

Catalog

8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor

Description

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical modulation formats.