IPL60R185CFD7AUMA1

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Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; THINPAK 8X8 PACKAGE; 185 MOHM; FAST RECOVERY DIODE

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IPL60R185CFD7AUMA1

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Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; THINPAK 8X8 PACKAGE; 185 MOHM; FAST RECOVERY DIODE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPL60R185CFD7AUMA1

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	1199 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	4-PowerTSFN
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs	185 mOhm
Supplier Device Package	PG-VSON-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPL60R Series

Part	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]
Infineon Technologies IPL60R185P7AUMA1	MOSFET (Metal Oxide)	150 °C	-40 °C	81 W	10 V	4-PowerTSFN	185 mOhm	25 nC	N-Channel	Surface Mount	PG-VSON-4	1081 pF	19 A	20 V	600 V	4 V
Infineon Technologies IPL60R160CFD7AUMA1	MOSFET (Metal Oxide)	150 °C	-40 °C		10 V	4-PowerTSFN	160 mOhm		N-Channel	Surface Mount	PG-VSON-4-1	1330 pF	16 A	20 V	600 V		31 nC	4.5 V	95 W
Infineon Technologies IPL60R2K1C6SATMA1	MOSFET (Metal Oxide)	150 °C	-40 °C	21.6 W	10 V	8-PowerTDFN	2.1 Ohm		N-Channel	Surface Mount	PG-TSON-8-2	140 pF	2.3 A	20 V	600 V		6.7 nC	3.5 V
Infineon Technologies IPL60R185CFD7AUMA1	MOSFET (Metal Oxide)	150 °C	-40 °C		10 V	4-PowerTSFN	185 mOhm	28 nC	N-Channel	Surface Mount	PG-VSON-4	1199 pF	14 A	20 V	600 V			4.5 V	85 W
Infineon Technologies IPL60R199CPAUMA1	MOSFET (Metal Oxide)	150 °C	-40 °C		10 V	4-PowerTSFN	199 mOhm		N-Channel	Surface Mount	PG-VSON-4	1520 pF	16.4 A	20 V	600 V		32 nC	3.5 V	139 W
Infineon Technologies IPL60R255P6AUMA1	MOSFET (Metal Oxide)	150 °C	-40 °C	126 W	10 V	4-PowerTSFN	255 mOhm		N-Channel	Surface Mount	PG-VSON-4	1450 pF	15.9 A	20 V	600 V		31 nC	4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.63
		10	$ 2.38
		100	$ 1.66
		500	$ 1.36
		1000	$ 1.26
	Digi-Reel®	1	$ 3.63
		10	$ 2.38
		100	$ 1.66
		500	$ 1.36
		1000	$ 1.26
	Tape & Reel (TR)	3000	$ 1.23

Description

General part information

IPL60R Series

The600V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Documents

Technical documentation and resources