IPL60R Series

Catalog

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; THINPAK 8X8 PACKAGE; 185 MOHM; PRICE/PERFORMANCE

Part	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]
Infineon Technologies IPL60R185P7AUMA1	MOSFET (Metal Oxide)	150 °C	-40 °C	81 W	10 V	4-PowerTSFN	185 mOhm	25 nC	N-Channel	Surface Mount	PG-VSON-4	1081 pF	19 A	20 V	600 V	4 V
Infineon Technologies IPL60R160CFD7AUMA1	MOSFET (Metal Oxide)	150 °C	-40 °C		10 V	4-PowerTSFN	160 mOhm		N-Channel	Surface Mount	PG-VSON-4-1	1330 pF	16 A	20 V	600 V		31 nC	4.5 V	95 W
Infineon Technologies IPL60R2K1C6SATMA1	MOSFET (Metal Oxide)	150 °C	-40 °C	21.6 W	10 V	8-PowerTDFN	2.1 Ohm		N-Channel	Surface Mount	PG-TSON-8-2	140 pF	2.3 A	20 V	600 V		6.7 nC	3.5 V
Infineon Technologies IPL60R185CFD7AUMA1	MOSFET (Metal Oxide)	150 °C	-40 °C		10 V	4-PowerTSFN	185 mOhm	28 nC	N-Channel	Surface Mount	PG-VSON-4	1199 pF	14 A	20 V	600 V			4.5 V	85 W
Infineon Technologies IPL60R199CPAUMA1	MOSFET (Metal Oxide)	150 °C	-40 °C		10 V	4-PowerTSFN	199 mOhm		N-Channel	Surface Mount	PG-VSON-4	1520 pF	16.4 A	20 V	600 V		32 nC	3.5 V	139 W
Infineon Technologies IPL60R255P6AUMA1	MOSFET (Metal Oxide)	150 °C	-40 °C	126 W	10 V	4-PowerTSFN	255 mOhm		N-Channel	Surface Mount	PG-VSON-4	1450 pF	15.9 A	20 V	600 V		31 nC	4.5 V