2N7000,126

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NXP USA Inc.

MOSFET N-CH 60V 300MA TO92-3

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NXP USA Inc.

MOSFET N-CH 60V 300MA TO92-3

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General part information

N-Channel 60 V 300mA (Tc) 830mW (Ta) Through Hole TO-92-3

Technical documentation and resources

Parameters and characteristics commom to parts in this series

Specification	2N7000,126	2N70 Series

Current - Continuous Drain (Id) @ 25°C	300 mA	290 - 340 mA
Drain to Source Voltage (Vdss)	60 V	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V	4.5 - 10 V
Drive Voltage (Max Rds On, Min Rds On)	-	10 V
Drive Voltage (Max Rds On, Min Rds On)	-	5 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	0.6 nC
Input Capacitance (Ciss) (Max) @ Vds	40 pF	40 - 50 pF
Mounting Type	Through Hole	Through Hole, Surface Mount
Operating Temperature	-	150 °C
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-65 - -55 °C
Package / Case	TO-226-3, TO-92-3	TO-226-3, TO-92-3, SC-75, SOT-416, SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	830 mW	250 - 830 mW
Rds On (Max) @ Id, Vgs	5 Ohm	1.6 - 5 Ohm
Supplier Device Package	TO-92-3	TO-92-3, SC-75, SOT-23 (TO-236AB)
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	30 V	15 - 30 V
Vgs(th) (Max) @ Id	2 V	2 - 2.4 V

MOSFET N-CH 60V 300MA TO92-3

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature
NXP USA Inc. 2N7000,126	300 mA	5 Ohm	Through Hole	30 V	TO-226-3, TO-92-3	60 V	40 pF	2 V	TO-92-3	830 mW	4.5 V, 10 V	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C
NXP USA Inc. 2N7002PT,115	310 mA	1.6 Ohm	Surface Mount	20 V	SC-75, SOT-416	60 V	50 pF	2.4 V	SC-75	250 mW		N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	5 V
NXP USA Inc. 2N7002BKT,115	290 mA	1.6 Ohm	Surface Mount	20 V	SC-75, SOT-416	60 V	50 pF	2.1 V	SC-75	260 mW		N-Channel	MOSFET (Metal Oxide)			10 V	5 V	0.6 nC	150 °C
NXP USA Inc. 2N7002K,215	340 mA	3.9 Ohm	Surface Mount	15 V	SC-59, SOT-23-3, TO-236-3	60 V	40 pF	2 V	SOT-23 (TO-236AB)	830 mW	4.5 V, 10 V	N-Channel	MOSFET (Metal Oxide)	-65 °C	150 °C