MOSFET N-CH 60V 300MA TO92-3
| Part | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs (Max) | Package / Case | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Supplier Device Package | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP USA Inc. 2N7000,126 | 300 mA | 5 Ohm | Through Hole | 30 V | TO-226-3, TO-92-3 | 60 V | 40 pF | 2 V | TO-92-3 | 830 mW | 4.5 V, 10 V | N-Channel | MOSFET (Metal Oxide) | -55 °C | 150 °C | ||||
NXP USA Inc. 2N7002PT,115 | 310 mA | 1.6 Ohm | Surface Mount | 20 V | SC-75, SOT-416 | 60 V | 50 pF | 2.4 V | SC-75 | 250 mW | N-Channel | MOSFET (Metal Oxide) | -55 °C | 150 °C | 10 V | 5 V | |||
NXP USA Inc. 2N7002BKT,115 | 290 mA | 1.6 Ohm | Surface Mount | 20 V | SC-75, SOT-416 | 60 V | 50 pF | 2.1 V | SC-75 | 260 mW | N-Channel | MOSFET (Metal Oxide) | 10 V | 5 V | 0.6 nC | 150 °C | |||
NXP USA Inc. 2N7002K,215 | 340 mA | 3.9 Ohm | Surface Mount | 15 V | SC-59, SOT-23-3, TO-236-3 | 60 V | 40 pF | 2 V | SOT-23 (TO-236AB) | 830 mW | 4.5 V, 10 V | N-Channel | MOSFET (Metal Oxide) | -65 °C | 150 °C |