SSM6N56FE,LM

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A ES6

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N56FE,LM

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]	1 nC
Input Capacitance (Ciss) (Max) @ Vds	55 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Rds On (Max) @ Id, Vgs	235 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Package / Case	FET Feature	FET Feature	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage SSM6N56FE,LM	1 nC	2 N-Channel (Dual)	SOT-563 SOT-666	Logic Level Gate	1.5 V	235 mOhm	1 V	MOSFET (Metal Oxide)	800 mA	150 °C	20 V	Surface Mount	ES6	55 pF

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General part information

Mosfet Array 20V 800mA 150mW Surface Mount ES6

Technical documentation and resources