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MOSFET 2N-CH 20V 0.8A ES6
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Configuration | Package / Case | FET Feature | FET Feature | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Drain to Source Voltage (Vdss) | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1 nC | 2 N-Channel (Dual) | SOT-563 SOT-666 | Logic Level Gate | 1.5 V | 235 mOhm | 1 V | MOSFET (Metal Oxide) | 800 mA | 150 °C | 20 V | Surface Mount | ES6 | 55 pF |