SSM6N56FE Series
Manufacturer: Toshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 20 V, 0.8 A, 0.235 Ω@4.5V, SOT-563(ES6)
| Part | Power - Max | Channel Count | Configuration | Configuration - Features | Input Capacitance (Ciss) (Max) | Technology | Current - Continuous Drain (Id) | Mounting Type | Drain to Source Voltage (Vdss) | FET Feature | FET Feature Drive Voltage | Vgs(th) (Max) | Gate Charge (Max) | Operating Temperature | Package / Case | Package Name | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 mW | 2 | N-Channel | Dual | 55 pF | MOSFET (Metal Oxide) | 800 mA | Surface Mount | 20 V | Logic Level Gate | 1.5 V | 1 V | 1 nC 1 nC | 150 °C | SOT-563 SOT-666 | ES6 | 235 mOhm |