APT2X21DC120J

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Microsemi Corporation

DIODE MOD SIC 1200V 20A SOT227

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Microsemi Corporation

DIODE MOD SIC 1200V 20A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	APT2X21DC120J

Current - Average Rectified (Io) (per Diode)	20 A
Current - Reverse Leakage @ Vr	400 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	ISOTOP
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Mounting Type	Supplier Device Package	Package / Case	Speed	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If
Microsemi Corporation APT2X21DC60J	SiC (Silicon Carbide) Schottky	600 V	0 ns	Chassis Mount	SOT-227	ISOTOP	No Recovery Time	2 Independent	175 ░C	-55 C	400 µA	20 A	1.8 V
Microsemi Corporation APT2X21DC120J	SiC (Silicon Carbide) Schottky	1.2 kV	0 ns	Chassis Mount	SOT-227	ISOTOP	No Recovery Time	2 Independent	175 ░C	-55 C	400 µA	20 A	1.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 2 Independent 1200 V 20A Chassis Mount ISOTOP

Technical documentation and resources