DIODE MOD SIC SCHOT 600V SOT227
| Part | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Mounting Type | Supplier Device Package | Package / Case | Speed | Diode Configuration | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation | SiC (Silicon Carbide) Schottky | 600 V | 0 ns | Chassis Mount | SOT-227 | ISOTOP | No Recovery Time | 2 Independent | 175 ░C | -55 C | 400 µA | 20 A | 1.8 V |
Microsemi Corporation | SiC (Silicon Carbide) Schottky | 1.2 kV | 0 ns | Chassis Mount | SOT-227 | ISOTOP | No Recovery Time | 2 Independent | 175 ░C | -55 C | 400 µA | 20 A | 1.8 V |