
IPD50N03S207ATMA1
LTBInfineon Technologies
IPD50N03S2-07 IS AN AUTOMOTIVE MOSFET OFFERING 30V, N-CH, 7.3 MΩ MAX, DPAK, OPTIMOS™, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.
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IPD50N03S207ATMA1
LTBInfineon Technologies
IPD50N03S2-07 IS AN AUTOMOTIVE MOSFET OFFERING 30V, N-CH, 7.3 MΩ MAX, DPAK, OPTIMOS™, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPD50N03S207ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 68 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 136 W |
| Rds On (Max) @ Id, Vgs | 7.3 mOhm |
| Supplier Device Package | PG-TO252-3-11 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
IPD50 Series
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Package / Case | Drain to Source Voltage (Vdss) | Grade | Qualification | Power Dissipation (Max) [Max] | FET Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) [Max] | Vgs (Max) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 12 mOhm | 50 A | Surface Mount | 16 V | 40 nC | PG-TO252-3-11 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 60 V | Automotive | AEC-Q101 | 50 W | N-Channel | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 2.2 V | 4.5 V 10 V | |||||||
Infineon Technologies | 12.7 mOhm | 50 A | Surface Mount | 20 V | 69 nC | PG-TO252-3-11 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 55 V | Automotive | AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 2 V | 4.5 V 10 V | 1800 pF | 136 W | ||||||
Infineon Technologies | 50 A | Surface Mount | 20 V | PG-TO252-3-11 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 60 V | N-Channel | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 4 V | 10 V | 3785 pF | 71 W | 9 mOhm | |||||||||
Infineon Technologies | 15 mOhm | 50 A | Surface Mount | 20 V | 64 nC | PG-TO252-3-11 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 100 V | 100 W | N-Channel | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 2.4 V | 4.5 V 10 V | 4180 pF | ||||||||
Infineon Technologies | 50 A | Surface Mount | 16 V | PG-TO252-3-313 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 40 V | Automotive | P-Channel | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 2.2 V | 4.5 V 10 V | 3900 pF | 58 W | 10.6 mOhm | 59 nC | |||||||
Infineon Technologies | 10.5 mOhm | 50 A | Surface Mount | PG-TO252-3-11 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 30 V | Automotive | AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 2 V | 3770 pF | 58 W | 55 nC | 5 V | -16 V | ||||||
Infineon Technologies | 50 A | Surface Mount | 20 V | PG-TO252-3-313 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 80 V | Automotive | AEC-Q101 | 72 W | N-Channel | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 4 V | 10 V | 1711 pF | 30 nC | |||||||
Infineon Technologies | 50 A | Surface Mount | 20 V | 47.1 nC | PG-TO252-3-11 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 60 V | Automotive | AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 4 V | 10 V | 3785 pF | 71 W | 9 mOhm | ||||||
Infineon Technologies | 12.6 mOhm | 50 A | Surface Mount | 20 V | 51 nC | PG-TO252-3-313 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 40 V | P-Channel | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 4 V | 10 V | 3670 pF | 58 W | ||||||||
Infineon Technologies | 7.3 mOhm | 50 A | Surface Mount | 20 V | 68 nC | PG-TO252-3-11 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 30 V | N-Channel | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 4 V | 10 V | 136 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.36 | |
| 10 | $ 1.52 | |||
| 100 | $ 1.04 | |||
| 500 | $ 0.83 | |||
| 1000 | $ 0.76 | |||
| Digi-Reel® | 1 | $ 2.36 | ||
| 10 | $ 1.52 | |||
| 100 | $ 1.04 | |||
| 500 | $ 0.83 | |||
| 1000 | $ 0.76 | |||
| Tape & Reel (TR) | 2500 | $ 0.69 | ||
| 5000 | $ 0.68 | |||
Description
General part information
IPD50 Series
N-Channel 30 V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
Documents
Technical documentation and resources