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IPD50N03S207ATMA1 - PG-TO252-3-11

IPD50N03S207ATMA1

LTB
Infineon Technologies

IPD50N03S2-07 IS AN AUTOMOTIVE MOSFET OFFERING 30V, N-CH, 7.3 MΩ MAX, DPAK, OPTIMOS™, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

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IPD50N03S207ATMA1 - PG-TO252-3-11

IPD50N03S207ATMA1

LTB
Infineon Technologies

IPD50N03S2-07 IS AN AUTOMOTIVE MOSFET OFFERING 30V, N-CH, 7.3 MΩ MAX, DPAK, OPTIMOS™, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD50N03S207ATMA1
Current - Continuous Drain (Id) @ 25°C50 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]68 nC
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)136 W
Rds On (Max) @ Id, Vgs7.3 mOhm
Supplier Device PackagePG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

IPD50 Series

PartRds On (Max) @ Id, VgsCurrent - Continuous Drain (Id) @ 25°CMounting TypeVgs (Max)Gate Charge (Qg) (Max) @ Vgs [Max]Supplier Device PackagePackage / CaseDrain to Source Voltage (Vdss)GradeQualificationPower Dissipation (Max) [Max]FET TypeTechnologyOperating Temperature [Min]Operating Temperature [Max]Vgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Rds On (Max) @ Id, Vgs [Max]Input Capacitance (Ciss) (Max) @ Vds [Max]Gate Charge (Qg) (Max) @ VgsVgs (Max) [Max]Vgs (Max) [Min]
Infineon Technologies
12 mOhm
50 A
Surface Mount
16 V
40 nC
PG-TO252-3-11
DPAK (2 Leads + Tab)
SC-63
TO-252-3
60 V
Automotive
AEC-Q101
50 W
N-Channel
MOSFET (Metal Oxide)
-55 °C
175 ░C
2.2 V
4.5 V
10 V
Infineon Technologies
12.7 mOhm
50 A
Surface Mount
20 V
69 nC
PG-TO252-3-11
DPAK (2 Leads + Tab)
SC-63
TO-252-3
55 V
Automotive
AEC-Q101
N-Channel
MOSFET (Metal Oxide)
-55 °C
175 ░C
2 V
4.5 V
10 V
1800 pF
136 W
Infineon Technologies
50 A
Surface Mount
20 V
PG-TO252-3-11
DPAK (2 Leads + Tab)
SC-63
TO-252-3
60 V
N-Channel
MOSFET (Metal Oxide)
-55 °C
175 ░C
4 V
10 V
3785 pF
71 W
9 mOhm
Infineon Technologies
15 mOhm
50 A
Surface Mount
20 V
64 nC
PG-TO252-3-11
DPAK (2 Leads + Tab)
SC-63
TO-252-3
100 V
100 W
N-Channel
MOSFET (Metal Oxide)
-55 °C
175 ░C
2.4 V
4.5 V
10 V
4180 pF
Infineon Technologies
50 A
Surface Mount
16 V
PG-TO252-3-313
DPAK (2 Leads + Tab)
SC-63
TO-252-3
40 V
Automotive
P-Channel
MOSFET (Metal Oxide)
-55 °C
175 ░C
2.2 V
4.5 V
10 V
3900 pF
58 W
10.6 mOhm
59 nC
Infineon Technologies
10.5 mOhm
50 A
Surface Mount
PG-TO252-3-11
DPAK (2 Leads + Tab)
SC-63
TO-252-3
30 V
Automotive
AEC-Q101
P-Channel
MOSFET (Metal Oxide)
-55 °C
175 ░C
2 V
3770 pF
58 W
55 nC
5 V
-16 V
Infineon Technologies
50 A
Surface Mount
20 V
PG-TO252-3-313
DPAK (2 Leads + Tab)
SC-63
TO-252-3
80 V
Automotive
AEC-Q101
72 W
N-Channel
MOSFET (Metal Oxide)
-55 °C
175 ░C
4 V
10 V
1711 pF
30 nC
Infineon Technologies
50 A
Surface Mount
20 V
47.1 nC
PG-TO252-3-11
DPAK (2 Leads + Tab)
SC-63
TO-252-3
60 V
Automotive
AEC-Q101
N-Channel
MOSFET (Metal Oxide)
-55 °C
175 ░C
4 V
10 V
3785 pF
71 W
9 mOhm
Infineon Technologies
12.6 mOhm
50 A
Surface Mount
20 V
51 nC
PG-TO252-3-313
DPAK (2 Leads + Tab)
SC-63
TO-252-3
40 V
P-Channel
MOSFET (Metal Oxide)
-55 °C
175 ░C
4 V
10 V
3670 pF
58 W
Infineon Technologies
7.3 mOhm
50 A
Surface Mount
20 V
68 nC
PG-TO252-3-11
DPAK (2 Leads + Tab)
SC-63
TO-252-3
30 V
N-Channel
MOSFET (Metal Oxide)
-55 °C
175 ░C
4 V
10 V
136 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.36
10$ 1.52
100$ 1.04
500$ 0.83
1000$ 0.76
Digi-Reel® 1$ 2.36
10$ 1.52
100$ 1.04
500$ 0.83
1000$ 0.76
Tape & Reel (TR) 2500$ 0.69
5000$ 0.68

Description

General part information

IPD50 Series

N-Channel 30 V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11