IPD50N06S2L13ATMA1

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Infineon Technologies

MOSFET N-CH 55V 50A TO252-3

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IPD50N06S2L13ATMA1

Unknown

Infineon Technologies

MOSFET N-CH 55V 50A TO252-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD50N06S2L13ATMA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	69 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	136 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12.7 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

IPD50 Series

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Grade	Qualification	Power Dissipation (Max) [Max]	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]
Infineon Technologies IPD50N06S4L12ATMA2	12 mOhm	50 A	Surface Mount	16 V	40 nC	PG-TO252-3-11	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	Automotive	AEC-Q101	50 W	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	2.2 V	4.5 V 10 V
Infineon Technologies IPD50N06S2L13ATMA1	12.7 mOhm	50 A	Surface Mount	20 V	69 nC	PG-TO252-3-11	DPAK (2 Leads + Tab) SC-63 TO-252-3	55 V	Automotive	AEC-Q101		N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	2 V	4.5 V 10 V	1800 pF	136 W
Infineon Technologies IPD50N06S409ATMA1		50 A	Surface Mount	20 V		PG-TO252-3-11	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V				N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	4 V	10 V	3785 pF	71 W	9 mOhm
Infineon Technologies IPD50N10S3L16ATMA1	15 mOhm	50 A	Surface Mount	20 V	64 nC	PG-TO252-3-11	DPAK (2 Leads + Tab) SC-63 TO-252-3	100 V			100 W	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	2.4 V	4.5 V 10 V				4180 pF
Infineon Technologies IPD50P04P4L11ATMA1		50 A	Surface Mount	16 V		PG-TO252-3-313	DPAK (2 Leads + Tab) SC-63 TO-252-3	40 V	Automotive			P-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	2.2 V	4.5 V 10 V	3900 pF	58 W	10.6 mOhm		59 nC
Infineon Technologies IPD50P03P4L11ATMA2	10.5 mOhm	50 A	Surface Mount			PG-TO252-3-11	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	Automotive	AEC-Q101		P-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	2 V		3770 pF	58 W			55 nC	5 V	-16 V
Infineon Technologies IPD50N08S413ATMA1		50 A	Surface Mount	20 V		PG-TO252-3-313	DPAK (2 Leads + Tab) SC-63 TO-252-3	80 V	Automotive	AEC-Q101	72 W	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	4 V	10 V	1711 pF				30 nC
Infineon Technologies IPD50N06S409ATMA2		50 A	Surface Mount	20 V	47.1 nC	PG-TO252-3-11	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	Automotive	AEC-Q101		N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	4 V	10 V	3785 pF	71 W	9 mOhm
Infineon Technologies IPD50P04P413ATMA1	12.6 mOhm	50 A	Surface Mount	20 V	51 nC	PG-TO252-3-313	DPAK (2 Leads + Tab) SC-63 TO-252-3	40 V				P-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	4 V	10 V	3670 pF	58 W
Infineon Technologies IPD50N03S207ATMA1	7.3 mOhm	50 A	Surface Mount	20 V	68 nC	PG-TO252-3-11	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V				N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	4 V	10 V		136 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPD50 Series

N-Channel 55 V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

Documents

Technical documentation and resources