ZVP2106A

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Technical Specifications

Parameters and characteristics for this part

Specification	ZVP2106A

Current - Continuous Drain (Id) @ 25°C	280 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	TO-92
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

P-Channel Enhancement Mode Vertical DMOS FET

Part	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)
Diodes Inc ZVP2106GTA	60 V	TO-261-4 TO-261AA	3.5 V	450 mA	MOSFET (Metal Oxide)	SOT-223-3	100 pF	2 W	5 Ohm	Surface Mount	-55 °C	150 °C	20 V	10 V	P-Channel
Diodes Inc ZVP2106A	60 V	TO-226-3 TO-92-3	3.5 V	280 mA	MOSFET (Metal Oxide)	TO-92	100 pF		5 Ohm	Through Hole	-55 °C	150 °C	20 V	10 V	P-Channel	700 mW
Diodes Inc ZVP2106ASTZ	60 V	E-Line-3	3.5 V	280 mA	MOSFET (Metal Oxide)	E-Line (TO-92 compatible)	100 pF		5 Ohm	Through Hole	-55 °C	150 °C	20 V	10 V	P-Channel	700 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly