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ZVP2106GTA - SOT-223-3

ZVP2106GTA

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 0.45A I(D), 60V, 5OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOT-223, 4 PIN

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ZVP2106GTA - SOT-223-3

ZVP2106GTA

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 0.45A I(D), 60V, 5OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOT-223, 4 PIN

Deep-Dive with AI

DocumentsDatasheetDatasheet+2

Technical Specifications

Parameters and characteristics for this part

SpecificationZVP2106GTA
Current - Continuous Drain (Id) @ 25°C450 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]100 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max) [Max]2 W
Rds On (Max) @ Id, Vgs5 Ohm
Supplier Device PackageSOT-223-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.02
10$ 0.83
100$ 0.65
500$ 0.55
Digi-Reel® 1$ 1.02
10$ 0.83
100$ 0.65
500$ 0.55
Tape & Reel (TR) 1000$ 0.45
2000$ 0.42
5000$ 0.40
10000$ 0.39

Description

General part information

ZVP2106G Series

P-Channel Enhancement Mode Vertical DMOS FET