Specification	STW30NM50N

Current - Continuous Drain (Id) (Tc)	27 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	94 nC
Input Capacitance (Ciss) (Max)	2740 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Power Dissipation (Max)	190 W
Rds On (Max)	115 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	4 V

STW30N Series

Part	Technology	Vgs(th) (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Operating Temperature	Vgs (Max)	FET Type	Mounting Type	Package Name	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)
STMicroelectronics STW30NM60N	MOSFET (Metal Oxide)	4 V	130 mOhm	2700 pF	91 nC	150 °C	30 V	N-Channel	Through Hole	TO-247-3	TO-247-3	190 W	10 V	600 V	25 A 25 A
STMicroelectronics STW30NF20	MOSFET (Metal Oxide)	4 V	75 mOhm	1597 pF	38 nC		20 V	N-Channel	Through Hole	TO-247-3	TO-247-3	125 W	10 V	200 V	30 A	-55 °C	150 °C
STMicroelectronics STW30NM60ND	MOSFET (Metal Oxide)	5 V	130 mOhm	2800 pF	100 nC	150 °C	25 V	N-Channel	Through Hole	TO-247-3	TO-247-3	190 W	10 V	600 V	25 A 25 A
STMicroelectronics STW30NM50N	MOSFET (Metal Oxide)	4 V	115 mOhm	2740 pF	94 nC	150 °C	25 V	N-Channel	Through Hole	TO-247-3	TO-247-3	190 W	10 V	500 V	27 A
STMicroelectronics STW30N20	MOSFET (Metal Oxide)	4 V	75 mOhm	1597 pF	38 nC			N-Channel	Through Hole	TO-247-3	TO-247-3	125 W		200 V	30 A	-55 °C	150 °C

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