STW30NM60N

Obsolete

STMicroelectronics

MOSFET N-CH 600V 25A TO247-3

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Obsolete

STMicroelectronics

MOSFET N-CH 600V 25A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW30NM60N

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	91 nC
Input Capacitance (Ciss) (Max) @ Vds	2700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs [Max]	130 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Operating Temperature	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STW30NM60N	600 V	91 nC	10 V	TO-247-3	25 A	130 mOhm	4 V	Through Hole	30 V	TO-247-3	N-Channel	2700 pF	190 W	150 °C	MOSFET (Metal Oxide)
STMicroelectronics STW30N20	200 V			TO-247-3	30 A		4 V	Through Hole		TO-247-3	N-Channel				MOSFET (Metal Oxide)	-55 °C	150 °C	125 W	38 nC	75 mOhm	1597 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 25A (Tc) 190W (Tc) Through Hole TO-247-3

Technical documentation and resources