DMN2026UVT-13

Active

Diodes Inc

MOSFET BVDSS: 8V~24V TSOT26 T&R 10K

Search across all available documentation for this part.

Active

Diodes Inc

MOSFET BVDSS: 8V~24V TSOT26 T&R 10K

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2026UVT-13

Current - Continuous Drain (Id) @ 25°C	6.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18.4 nC
Input Capacitance (Ciss) (Max) @ Vds	887 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.15 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	TSOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.5 V

N-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Technology
Diodes Inc DMN2026UVT-13	1.15 W	887 pF	6.2 A	24 mOhm	2.5 V 4.5 V	18.4 nC	SOT-23-6 Thin TSOT-23-6	10 V	-55 °C	150 °C	N-Channel	Surface Mount	20 V	TSOT-23-6	1.5 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Enhancement Mode MOSFET

Technical documentation and resources