Catalog
N-Channel Enhancement Mode MOSFET
Key Features
• Low Input Capacitance
• Low On-Resistance
• Fast Switching Speed
Beta
⌘K
N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 1.15 W | 887 pF | 6.2 A | 24 mOhm | 2.5 V 4.5 V | 18.4 nC | SOT-23-6 Thin TSOT-23-6 | 10 V | -55 °C | 150 °C | N-Channel | Surface Mount | 20 V | TSOT-23-6 | 1.5 V | MOSFET (Metal Oxide) |